Towards the fundamental limits of noise performance of III-V high electron mobility transistor microwave amplifiers—Mar. 23

Microwave amplifiers based on III-V high electron mobility transistors (HEMTs) are a key component of scientific instrumentation. Lower noise devices are of intense interest for applications in radio astronomy and quantum computing. In this talk, Minnich will discuss our efforts to identify and mitigate noise sources in HEMTs at cryogenic temperatures and thereby realize transistor amplifiers operating near the quantum noise limit.

12PM - 1PM EST
Virtual on Zoom
Part of the MTL Seminar Series. 

Thinking outside the die: Trillion transistor chips for the ML accelerator of the future—Mar. 16

ML models are growing at an unprecedented rate and traditional forms of scaling chip performance are insufficient to keep up. In this talk, Lie will examine how co-design can enable specialized ML architectures including wafer-scale chips, sparse computation, optimized memories, and interconnects. Lie will explore this rich design space using the Cerebras architecture as a case study, highlighting design principles that enable the ML models of the future.

12PM - 1PM EST
Virtual on Zoom
Part of the MTL Seminar Series

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